SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative strategies in memory and storage technology aimed at boosting artificial intelligence infrastructure. The company announced these plans at the 2026 OCP Global Summit in San Jose, California, held from October 12 to 15. Its roadmap emphasizes high-performance memory, expanding memory through Compute Express Link, and next-generation solid-state drives. Samsung also plans to showcase a joint CXL demonstration with AMD. These initiatives are designed to address current AI server capacity limitations.
The company’s strategy revolves around three core objectives: enhancing speed, increasing memory scalability, and ensuring data persistence. For improved speed, Samsung showcased customized high-bandwidth memory alongside the eighth generation, HBM5. To achieve scalability, it promoted CXL as a method to extend capacity beyond the memory installed within individual servers. For data persistence, Samsung introduced next-generation SSD-based storage and management technologies. Additionally, the company presented storage software designed to optimize data processing efficiency in AI systems.
According to Samsung, the rising deployment of AI agents necessitates increased memory during inference. Larger models generate more data when producing responses, and this data must remain accessible to processors. Traditional systems restrict the amount of memory each processor can access. Samsung highlighted CXL technology as an effective solution to overcome this limitation. The presentation also included key-value cache optimization, which enables AI models to reuse already processed data instead of performing redundant computations.
Partnership with AMD Expands to CXL Memory Expansion Solutions
Samsung and AMD will collaboratively demonstrate a CXL-based solution designed to increase memory capacity in AI systems. This technology allows processors to share memory resources rather than relying solely on local server memory. Samsung reports that engineers have validated this solution in real system environments. The demonstration builds on a memorandum of understanding signed by both companies in March 2026, focusing on next-generation AI memory and computing. On October 7, AMD CEO Lisa Su visited Korea and met with Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was also a key feature of Samsung’s showcase. The company demonstrated CMM-D, a CXL-based DRAM module that connects multiple memory units into one shared pool. Systems can allocate capacity from this pool based on workload demands. Samsung also displayed processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and lower energy consumption. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Collaborative Design Influences Samsung’s AI Memory Strategy
Shim Ho-jun, Samsung’s Corporate Vice President and head of the Application Engineering Team, outlined the company’s plans during an executive session. He emphasized that the growth of larger AI models and increased inference workloads make higher memory capacity and bandwidth vital for system performance. Shim also mentioned that Samsung is expanding co-design and technical validation efforts with international partners from the earliest development phases. The goal is to align memory and storage products more closely with customer system designs.
Samsung MAX Lab offers clients a platform to evaluate memory and storage solutions under real-world AI workloads. It also facilitates co-design tailored to specific system configurations. Customers can test pre-commercial technologies, such as PIM and next-generation SSDs, before they become market-ready. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as the company continues to expand its presence in AI memory development.